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Relation between OHsub (-) defect reorientation rates and the quenching of F center luminescence in alkali halides

GOMES, L.; LUTY, F.; INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING CRYSTALS (2014)

Total quenching of excited F center luminescence and photoionization by OHsup(-) molecular defect in KCl

GOMES, L.; LUTY, F.; INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING CRYSTALS (2014)

F-aggregate centers formation in BaLiFsub(3) crystals

PRADO, L.; GOMES, L.; BALDOCHI, S.L.; MORATO, S.P.; VIEIRA JUNIOR, N.D. (1999)

Photochemistry and reactions of OHsup(-) defects and F centers in alkali halides

MORATO, S.P.; LUTY, F. (1980)

Total quenching of F-center luminescence and photoionization by OHsub(-) molecular defects in KCl

GOMES, L.; LUTY, F. (1984)

Hydrogen defects from UV photodissociation of OHsup(-) centers in alkali halides

MORATO, S.P.; LUTY, F. (1980)

Relationship between OH sup(-) defect reorientation rates and the quenching of the F-center luminescence in alkali halides

GOMES, L.; LUTY, F. (1995)

Estudo do processo de estabilizacao dos centros Fsup(+)sub(2) em cristais de LIF:OHsup(-) irradiados e espectroscopia dos produtos de dissociacao

COURROL, LILIA C. (1990)

Formation of non-substitutional beta-Sn defects in Ge1-x Snx alloys

Fuhr, Javier Daniel; Ventura, Cecilia Ileana; Barrio, Rafael A. (Amer, 2013-11)

Although group IV semiconductor alloys are expected to form substitutionally, in Ge1xSnx this is true only for low concentrations (x < 0.13). The use of these alloys as a narrow gap semiconductor depends on the ability to ...

On the trapping of Bjerrum defects in ice I-h: The case of the molecular vacancy

de Koning, M; Antonelli, A (Amer Chemical SocWashingtonEUA, 2007)

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