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A review on dielectric breakdown in thin dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics
(Wiley VCH Verlag, 2019-04-30)
Thin dielectric films are essential components of most micro- and nanoelectronic devices, and they have played a key role in the huge development that the semiconductor industry has experienced during the last 50 years. ...
Physical mechanism of progressive breakdown in gate oxides
(American Institute of Physics, 2014-06)
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of ...
Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric
(Blackwell Publishing, 2018-03)
Multilayer hexagonal boron nitride (h-BN) is an insulating 2D material that shows good interaction with graphene and MoS2, and it is considered a very promising dielectric for future 2D-materials-based electronic devices. ...
Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
(Pergamon-Elsevier Science Ltd, 2016-01)
In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3,HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration ...
Impact of bilayered oxide stacks on the breakdown transients of Metal-Oxide-Semiconductor devices: an experimental study
(American Institute of Physics, 2020-05)
The role of the bilayered structure of the gate oxide on the dynamics of progressive breakdown is systematically studied on Au / Cr / HfO 2 / Al 2 O 3 / InGaAs metal-oxide-semiconductor stacks. Samples with bilayered oxides ...
Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride
(American Chemical Society, 2017-11)
Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb ...
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
(Japan Society Applied Physics, 2021-10)
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on ...
X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
(American Institute of Physics, 2014-08)
In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive ...
Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
(Japan Society Applied Physics, 2008-12)
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed ...
Electro-mechanical actuation performance of SEBS/PU blends
(Elsevier Ltd, 2019)
Dielectric elastomers have been regarded as truly artificial muscles for their electro-mechanical (EM) actuation performance. However, they require large driving voltages to present adequate actuation strains. The main ...