Purpose: The purpose of this paper is to investigate electrical properties of eutectic In8Sb8Te84 and In10Sb51Te39 as made thin films to evaluate their potential for non-volatile phase-change memories, once the thermal ...

Anode geometry can play a crucial role in magnetron sputtering deposition. In this work, we investigated the use of five different ring anodes placed in front of the target. Their effects in the current-voltage relations ...

In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point ...

The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially ...

The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of ...

An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation ...

Using the improved expression of the defect pool model proposed by Powell and Deane we match the experimental current–voltage and the spectral response characteristic curves of hydrogenated amorphous silicon solar cells. ...

In this paper the power system voltage stability problem is analyzed with active power–voltage (PV) curves, as a voltage compensator is introduced. The PV curves’ shape has been a subject of great concern, especially when ...