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Grain boundary conductivity of heterogeneous ceria gadolinia
(Pergamon-elsevier Science LtdOxfordInglaterra, 2012)
Quantum theory of the effect of grain boundaries on the electrical conductivity of thin films and wires
(Elsevier, 2015)
We calculate the electrical conductivity of a metallic sample under the effects of distributed impurities
and a random distribution of grain boundaries by means of a quantum mechanical procedure based on
Kubo formula. ...
Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor
(Wiley-v C H Verlag Gmbh, 2008-07-01)
The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V ...
Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor
(Wiley-v C H Verlag Gmbh, 2008-07-01)
The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V ...
Strain-polarization coupling mechanism of enhanced conductivity at the grain boundaries in BiFeO3 thin films
(Elsevier B.V., 2020-09-01)
Charge transport across the interfaces in complex oxides attracts a lot of attention because it allows creating novel functionalities useful for device applications. It has been observed that movable domain walls in epitaxial ...
The effect of electron scattering from disordered grain boundaries on the resistivity of metallic nanostructures
(Elsevier, 2015)
We calculate the electrical resistivity of a metallic specimen, under the combined effects of electron scattering by impurities, grain boundaries, and rough surfaces limiting the film, using a quantum theory based upon the ...
The effect of electron scattering from disordered grain boundaries on the resistivity of metallic nanostructures
(Elsevier, 2015)
We calculate the electrical resistivity of a metallic specimen, under the combined effects of electron scattering by impurities, grain boundaries, and rough surfaces limiting the film, using a quantum theory based upon the ...
The influence of grain size on the hydrogen diffusion in bcc Fe
(Elsevier, 2021-02-15)
This work studies the diffusion of Hydrogen (H) in bcc Fe, containing a high-angle symmetric tilt grain boundary (GB), as a function of both the temperature and the average grain size. For this purpose, we propose a ...
Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor
(Wiley-v C H Verlag Gmbh, 2014)
Propriedades eletrônicas e estruturais de defeitos topológicos e fronteiras de grão em grafeno
(Universidade Federal de Minas GeraisUFMG, 2007-08-14)
In this work, we investigate electronic and structural properties of grain boundaries in graphene, with first principles calculations, based on the Kohn-Sham density functional theory, within the pseudopotential approximation. ...