We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage ...

In this work we present a Conducting Atomic Force Microscopy (CAFM) study of TiO2 thin films that display bipolar resistive switching behavior. Samples were synthesized by reactive sputtering after a lithography process ...

We have studied the effects of accumulating cyclic electrical pulses of increasing amplitude on the non-volatile resistance state of interfaces made by sputtering a metal (Au, Pt) on top of the surface of a cuprate ...

The technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied ...

Resistance random access memory (ReRAM) is considered a promising candidate for the next generation of non-volatile memory. In this work, we fabricate Co/HfO2/Ti devices incorporating atomic-layer-deposited HfO2 thin films ...

We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication ...

Bipolar resistive switching in low cost n-Si/La2/3Ca1/3MnO3/M (M¼TiþCu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of ...

We investigate the switching kinetics of oxygen vacancy (Ov) diffusion in La(5/8-y)Pr(y)Ca(3/8)MnO(3)-Ag (LPCMO-Ag) memristive interfaces by performing experiments on the temperature dependence of the high resistance state ...