Buscar
Mostrando ítems 1-9 de 9
Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells
(Elsevier Science, 2004-08)
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band ...
Using computer modeling analysis in single a-SiGe:H p-i-n solar cells
(American Institute of Physics, 2002-02)
In this article we discuss basic aspects of single junction a-SiGe:H p–i–n solar cells by coupling computer simulations with experimental characteristics. We are able to fit the dark illuminated current–voltage characteristics ...
Improvement in the spectral response at long wavelenghts of a-SiGe:H solar cells by exponential band gap design of the i-layer
(Elsevier Science, 2002-08)
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. In this paper we compare its optical and electrical characteristics ...
Estudio de estructura de bandas en cristales fotónicos superconductores 2D usando polarización TM
(2015-09-14)
En el presente trabajo se desarrolla un estudio teórico de la estructuras de bandas en cristales fotónicos superconductores 2D a temperaturas de 5 K y 15 K, usando ondas planas de polarización TM incidentes sobre el cristal. ...
Propiedades ópticas de películas delgadas de CdSe obtenidas por rocío pirolítico
(Revista Mexicana de Física, 2009)
Caracterización de propiedades estructurales y electrónicas de superficies de óxido de zinc con impureza de cerio
(Facultad de Ciencias BásicasMontería, Córdoba, ColombiaFísica, 2023)