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Optical absorption and band gap shift of n-doped AlxGa1???xAs alloys grown by MBE
(Microelectronic Engineering, 1998)
Optical and reduced band gap in n- and p-type GaN and AlN
(2002-09)
We present a full band calculation of the doping-induced energy shifts of the conduction-band minimum and the valence-band maximum for n- and p-type GaN and AlN. Both wurtzite and zinc-blende structures have been considered. ...
Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
(Microelectronic Engineering, 1998)
We have investigated the band gap shift of Si-doped AlxGa1−xAs alloys as a function of both silicon concentration and Al composition. Correlation and impurity scattering effects were included in the theoretical model. The ...
Influence of Si doping on optical properties of wurtzite GaN
(2001)
The band gap shift (BGS) of Si-doped wurtzite GaN for impurity concentrations spanning the insulating to the metallic regimes has been investigated at low temperature. The critical impurity concentration for the metal-non-metal ...
Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si
(2002-04)
The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, Nc, for the metal–nonmetal transition is estimated in three different ways: from ...
BAND-GAP SHIFT IN CDS SEMICONDUCTOR BY PHOTOACOUSTIC-SPECTROSCOPY - EVIDENCE OF A CUBIC TO HEXAGONAL LATTICE TRANSITION
(Amer Inst PhysicsWoodbury, 1994)
Electronic band-edge properties of rock
(2008)
The electronic band-edges of lead chalcogenides PbY and tin chalcogenides SnY (where Y = S, Se, and Te) are investigated by the means of a full-potential linearized augmented plane wave (FPLAPW) method and the local density ...