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Novel Schiff base self-condensed oligomers in complexation with metallic triflates of low-band gap properties
(Springer-Verlag London Ltd, 2015)
CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections
(ELSEVIER SCIENCE BVAMSTERDAM, 2012)
We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction ...
CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections
(ElsevierAmsterdam, 2012)
Optical and reduced band gap in n- and p-type GaN and AlN
(2002-09)
We present a full band calculation of the doping-induced energy shifts of the conduction-band minimum and the valence-band maximum for n- and p-type GaN and AlN. Both wurtzite and zinc-blende structures have been considered. ...
Spectroscopic studies of SnO2 doped with Cr, Co or Nb
(2003-03-15)
SnO2 ceramics doped with different amounts of Co, Cr or Nb were investigated using visible and infrared spectroscopy at room temperature. Based on the observed d-d transitions the valence states of incorporated dopants ...
Spectroscopic studies of SnO2 doped with Cr, Co or Nb
(2003-03-15)
SnO2 ceramics doped with different amounts of Co, Cr or Nb were investigated using visible and infrared spectroscopy at room temperature. Based on the observed d-d transitions the valence states of incorporated dopants ...
Optical absorption and band gap shift of n-doped AlxGa1???xAs alloys grown by MBE
(Microelectronic Engineering, 1998)
Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
(Microelectronic Engineering, 1998)
We have investigated the band gap shift of Si-doped AlxGa1−xAs alloys as a function of both silicon concentration and Al composition. Correlation and impurity scattering effects were included in the theoretical model. The ...
Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films
(Springer, 2009-01-01)
Ba[Zr0.25Ti0.75]O-3 (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 A degrees C for different times and at 700 A degrees C for 2 h. These thin films were analyzed by X-ray ...
Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films
(Springer, 2009-01-01)
Ba[Zr0.25Ti0.75]O-3 (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 A degrees C for different times and at 700 A degrees C for 2 h. These thin films were analyzed by X-ray ...