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Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films
(Springer, 2009-01-01)
Ba[Zr0.25Ti0.75]O-3 (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 A degrees C for different times and at 700 A degrees C for 2 h. These thin films were analyzed by X-ray ...
Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films
(Springer, 2009-01-01)
Ba[Zr0.25Ti0.75]O-3 (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 A degrees C for different times and at 700 A degrees C for 2 h. These thin films were analyzed by X-ray ...
Defects or charge transfer: Different possibilities to explain the photoluminescence in crystalline Ba(ZrxTi1-x)O-3
(Elsevier B.V., 2016-11-01)
In this work, BZT (Ba (ZrxTi1-x)O-3), composite ceramic powder with x=0, 0.25, 0.50, 0.75 and 1 (mol) was prepared by the microwave-assisted hydrothermal method. The structural, morphological and optical properties of the ...
Influence of Tungsten Dopant on Sintering and Curie Temperatures of Ba(Zr0.10Ti0.90)O-3 Ceramics
(Taylor & Francis Ltd, 2008-01-01)
Ba(Zr0.10Ti0.90)O3 (BZT10) and W+ 6 substituted BZT ceramics (BZT10:W) were prepared by mixed oxide method. The effect of W+ 6 addition in the BZT was evaluated by X-ray diffraction (XRD), dilatometer analysis, microstructural ...
Influence of Tungsten Dopant on Sintering and Curie Temperatures of Ba(Zr0.10Ti0.90)O-3 Ceramics
(Taylor & Francis Ltd, 2008-01-01)
Ba(Zr0.10Ti0.90)O3 (BZT10) and W+ 6 substituted BZT ceramics (BZT10:W) were prepared by mixed oxide method. The effect of W+ 6 addition in the BZT was evaluated by X-ray diffraction (XRD), dilatometer analysis, microstructural ...
Comportamento dielétrico e ferroéletrico de cerâmicas BA('TI IND1-X''ZR IND.X)'O IND.3' modificadas com íons vanádio e tungstênio obtidos a partir de mistura de óxidos
(Universidade Estadual Paulista (Unesp), 2008-02-29)
O objetivo central deste trabalho foi obter cerâmicas de Ba(Ti1-xZrx)O3 puras e modificadas com íons vanádio (V5+) ou tungstênio (W6+) pelo método convencional de mistura de óxidos com elevada permissividade dielétrica. A ...
Comportamento dielétrico e ferroéletrico de cerâmicas BA('TI IND1-X''ZR IND.X)'O IND.3' modificadas com íons vanádio e tungstênio obtidos a partir de mistura de óxidos
(Universidade Estadual Paulista (Unesp), 2008-02-29)
O objetivo central deste trabalho foi obter cerâmicas de Ba(Ti1-xZrx)O3 puras e modificadas com íons vanádio (V5+) ou tungstênio (W6+) pelo método convencional de mistura de óxidos com elevada permissividade dielétrica. A ...
Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method
(Elsevier B.V., 2007-10-15)
Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. ...
Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method
(Elsevier B.V., 2007-10-15)
Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. ...
Dielectric response of tungsten modified Ba(Ti0.90Zr0.10)O3 ceramics obtained by mixed oxide method
(2010)
The electrical response of Ba(Ti0.90Zr0.10)O3 (BZT) ceramics obtained by the mixed oxide method as a functionof tungsten content was investigated. According to X-ray diffraction analysis the single phase BZT1W (1wt.% W ...