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Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
(Amer Inst PhysicsWoodburyEUA, 1999)
Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution
(American Physical SocCollege PkEUA, 1998)
On the onset of InAs islanding on InP: influence of surface steps
(Elsevier Science BvAmsterdamHolanda, 1997)
PROPERTIES OF ALXGA1-XAS WITH AN ALAS BUFFER LAYER ON SI SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
(Elsevier Science BvAmsterdamHolanda, 1991)
Observation of CuPt and CuAu I-type ordered structure in HgCdTe grown by isothermal vapour phase epitaxy
(Elsevier Science, 2003-07)
Ordered structures, CuPt and CuAu I types in HgCdTe are reported for the first time. Hg1-xCdxTe thin crystals were grown by isothermal vapour phase epitaxy (ISOVPE) method on a CdTe substrate and they were observed by ...
Assessment of a non-linear diffusive-convective model for the ISOVPE MCT growth
(Elsevier Science Sa, 2000-09)
Hg1-uCduTe (MCT) is the most important semiconductor for infrared detection. The ISOVPE technique allows good quality MCT epilayers . For technological and scientific reasons it is interesting to have a model which accurately ...
ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
(Elsevier Science, 2006-09)
Epitaxial films of Hg1-xCdxTe (MCT) with x≅0.2 were grown on CdTe, Cd0.96Zn0.04Te and CdTe0.96Se0.04 substrates by the isothermal vapor phase epitaxy (ISOVPE) technique with no mercury overpressure. The growth was accomplished ...
Termination of hollow core nanopipes in GaN by an AlN interlayer
(Elsevier, 2019)