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Products of the quenching of NO A 2Σ+ (v = 0) by N2O and CO2
(Royal Society of Chemistry, 2013)
Light-responsive hybrid material based on luminescent core-shell quantum dots and steroidal organogel
(Royal Society of Chemistry, 2016-06)
We report the synthesis of a smart novel hybrid with reversible photoswitchable luminescence properties modulated by light. The combination of a low molecular weight organogelator (LMOG) and CdSe/ZnS core-shell semiconductor ...
Average diagonal entropy in nonequilibrium isolated quantum systems
(American Physical Society, 2016-07)
The diagonal entropy was introduced as a good entropy candidate especially for isolated quantum systems out of equilibrium. Here we present an analytical calculation of the average diagonal entropy for systems undergoing ...
Visible light photopolymerization in BHDC reverse micelles: laser flash photolysis study of the photoinitiating mechanism
(Elsevier Science, 2013-02)
The photopolymerization of acrylamide (AA) in reverse micelles (RMs) of benzyl hexadecyl dimethylammonium chloride (BHDC) was investigated. The polymerization was performed by irradiation in the 500 nm region of the spectrum, ...
Self-assembled zinc blende GaN quantum dots grown
(American Institute of Physics (AIP), 2013)
PHOTOINTERACTION OF BENZOPHENONE TRIPLET WITH LYSOZYME
(1989)
Abstract The quenching of the benzophenone triplet by lysozyme and its constituent amino acids in aqueous solutions have been studied. Native lysozyme quenches the benzophenone triplet with a high rate constant, 4 × ...
Disordered Bose-Einstein condensate in hard walls trap
(Iop Publishing Ltd, 2019-11-01)
We discuss the effects of quenched disorder in a dilute Bose-Einstein condensate confined in a hard walls trap. Starting from the disordered Gross-Pitaevskii functional, we obtain a representation for the quenched free ...
Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy
(American Institute of Physics (AIP), 2003-04-15)
GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 ...