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Annealing effects on optical properties of natural alexandrite
(Iop Publishing Ltd, 2003-11-05)
Natural alexandrite (BeAl2O4:Cr3+) crystals are investigated as regards the effects of annealing on their optical properties. Optical absorption spectra are measured from the ultraviolet (190 nm) to the near infrared (900 ...
Effect of annealing temperature on the crystalline quality of Chemically Deposited CdSe films
(Sociedad Mexicana de Ciencia de Superficies y Vacio, 2013-01-16)
Molecular Dynamics simulations of track formation at different ensembles
(Pergamon-elsevier Science LtdOxfordInglaterra, 2013)
Temperature dependence on the electrical properties of Ba(Ti0.90Zr0.10)O-3:2V ceramics
(Elsevier B.V. Sa, 2010-10-01)
Barium zirconium titanate ferroelectric ceramics modified with vanadium Ba(Ti0.90Zr0.10V0.02)O-3 (BZT:2V) were prepared from powders synthesized using the mixed oxide method. The effect of temperature on the structural and ...
Performance of annealed hybride silicon heterojunctions: a numerical computer study
(American Institute of Physics, 2005-01)
The performance of the standard hydrogenated amorphous silicon carbon–crystalline silicon solar cell is extensively compared with the performance of a hybrid structure subjected to a high-temperature annealing processing. ...
Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer
(2013-10-01)
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. ...
Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer
(2013-10-01)
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. ...
Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor
(2014)
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. ...