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A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
(Iop Publishing Ltd, 2009-03-07)
This paper proposes a polaronic stacking fault defect model as the origin of the huge dielectric properties in CaCu3Ti4O12 (CCTO) materials. The model reconciles the opposing views of researchers on both sides of the ...
A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
(Iop Publishing Ltd, 2009-03-07)
This paper proposes a polaronic stacking fault defect model as the origin of the huge dielectric properties in CaCu3Ti4O12 (CCTO) materials. The model reconciles the opposing views of researchers on both sides of the ...
Dyadic Green’s function for the graphene-dielectric stack with arbitrary field and source points
(Optical Society of America, 2021-08)
In this paper, the dyadic Green's function for a graphene-dielectric stack is formulated based on the scattering superposition method. To this end, the scattering Green's function in each layer is expanded in terms of ...
Structural and dielectric properties of relaxor Sr0.5Ba0.5Bi2Nb2O9 ceramic
(Maney Publishing, 2010-01-01)
Sr0.5Ba0.5Bi2Nb2O9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and ...
Structural and dielectric properties of relaxor Sr0.5Ba0.5Bi2Nb2O9 ceramic
(Maney Publishing, 2010-01-01)
Sr0.5Ba0.5Bi2Nb2O9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and ...
Analysis of dielectric grating waveguides for the design of dichroic structures
(John Wiley & Sons IncNew York, 1996)
Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors
(ELSEVIER SCIENCE SA, 2009)
Metal oxide semiconductor (MOS) capacitors with titanium oxide (TiO(x)) dielectric layer, deposited with different oxygen partial pressure (30,35 and 40%) and annealed at 550, 750 and 1000 degrees C, were fabricated and ...
Extension of a classic theory of the low frequency dielectric dispersion of colloidal suspensions to the high frequency domain
(American Chemical Society, 2010-10)
The classic Shilov-Dukhin theory of the low frequency dielectric dispersion of colloidal suspensions in binary electrolyte solutions [Shilov, V. N.; Dukhin, S. S., Colloid J. 1970, 32, 245.; Dukhin, S. S.; Shilov, V. N. ...
Dielectric behavior of epoxy/BaTiO3 composites using nanostructured ceramic fibers obtained by lectrospinning
(American Chemical Society, 2013-02-02)
Composite materials made of epoxy resin and barium titanate (BT) electrospun nanostructured fibers were prepared. BT fibers were synthesized from a sol based on barium acetate, titanium isopropoxide, and poly(vinyl ...
Metal gate work function tuning by Al incorporation in TiN
(Amer Inst PhysicsMelvilleEUA, 2014)