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Stochastic approach to the smart quantum confinement model in porous silicon
(Surface Science 515 (2002) L509-L513, 2002)
A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the ...
Estudo das propriedades térmicas de nanofios de silício
(Universidade Federal de Santa MariaBRFísicaUFSMPrograma de Pós-Graduação em Física, 2006-06-25)
In this work we present the results of the study of thermal stability of silicon
nanowires (SiNWs), carried out by computational simulation using Monte Carlo
methods. The study focuses on cylindrical nanowires grown in ...
Simulación Estática y Dinámica de un Modelo Físico del Diodo PiN en Carburo de Silicio
(Centro de Información Tecnológica, 2010)