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Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films
(2012-10-31)
Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film ...
Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films
(2012-10-31)
Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film ...
A barreira Schottky na interface Al:nGaAs preparada por MBE
(Universidade Federal de Minas GeraisUFMG, 1992-03-09)
In onder to study mechanisms of Fermi levei pinnlg we haveprepared Intrerffiices belrween Al and nGaAs(100) by MBE .The Sahottkybarrier for different, sample t.emporatures is then obtained from I(V) andC(V). As the Schottky ...
Nonlinear absorption coefficient and relative refraction index change for an asymmetrical double δ-doped quantum well in GaAs with a Schottky barrier potential
(Elsevier, 2013-09-01)
In this work we are reporting the energy level spectrum for a quantum system consisting of an n-type double -doped quantum well with a Schottky barrier potential in a Gallium Arsenide matrix. The calculated states are taken ...
Construção e caracterização de célula solar tipo barreira Schottky CdTe/AlConstruction and caracterization of Schottky barrier solar cells CdTe/Al
(Universidade Federal de ViçosaBRFísica Teórica e Computacional; Preparação e Caracterização de Materiais; Sensores e Dispositivos.Mestrado em Física AplicadaUFV, 2015)
Recent research developments in SnO2-based varistors
(Elsevier B.V., 2005-03-15)
This paper discusses some advances in research conducted on SnO2-based electroceramics. The addition of different dopants, as well as several thermal treatments in oxidizing and inert atmospheres, were found to influence ...
Recent research developments in SnO2-based varistors
(Elsevier B.V., 2014)
ON THE ORIGIN OF FRANZ-KELDYSH OSCILLATIONS IN ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS
(Amer Inst PhysicsWoodbury, 1991)