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Experimental analysis of differential pairs designed with line tunnel FET devices
(2018-03-07)
The aim of this work is to study, for the first time, the behavior of differential pair circuits designed with Line TFETs and compare the suitability of this technology with alternatives such as FinFETs and Point TFETs. ...
Comparison between nMOS and pMOS Ω-gate nanowire down to 10 nm width as a function of back gate bias
(2019-01-30)
This paper presents a comparison between nMOS and pMOS Ω-Gate Nanowire for different channel width (W NW ) down to 10 nm as a function of the large back gate bias variation (from +20 to -20 V) experimentally and by simulation. ...
Analog parameters of solid source Zn diffusion in X Ga1-XAs nTFETs down to 10 K
(2016-10-28)
The analog parameters of In0.53Ga0.47As and In0.7Ga0.3As nTFETs with solid state Zn diffused source are investigated from room temperature down to 10 K. The In0.7Ga0.3As devices are shown to yield a higher on-state current ...
Cryogenic operation of FinFETs aiming at analog applications
(2009)
FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold ...
Influence of geometrical parameters on the DC analog behavior of the asymmetric self-cascode FD SOI nMOSFETs
(2018)
© 2018, Brazilian Microelectronics Society. All rights reserved.This paper assesses the DC analog performance of a composite transistor named Asymmetric Self-Cascode structure, which is formed by two Fully Depleted SOI ...
Cryogenic operation of FinFETs aiming at analog applications
(2009)
FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold ...
Análise e controle da tensão em redes elétricas com instalações fotovoltaicas
(Universidade Estadual Paulista (Unesp), 2019-05-14)
Na busca de soluções inovadoras para atender o aumento da demanda de consumo de energia elétrica, as fontes de energia de natureza fotovoltaica tem sido um dos principais pilares deste seguimento. São fontes intrinsicamente ...
Minimum supply voltage of 2.45 GHz LC oscillator in 28 nm FD-SOI process
(IEEE, 2021)
The minimum supply voltage limit is studied in the case of a 2.45 GHz LC cross-coupled oscillator, in a 28 nm FD-SOI technology. An approach with simple equations aided with look up tables is used to obtain a theoretical ...
Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
(PERGAMON-ELSEVIER SCIENCE LTD, 2011)
This work characterizes the analog performance of SOI n-MuGFETs with HfSiO gate dielectric and TiN metal gate with respect to the influence of the high-k post-nitridation. TiN thickness and device rotation. A thinner TiN ...