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Delocalization-localization transition of plasmons in random (GaAs)(m)(Al(0.3)Ga(0.7)As)(6) superlattices
(AMER PHYSICAL SOC, 2009)
The transition of plasmons from propagating to localized state was studied in disordered systems formed in GaAs/AlGaAs superlattices by impurities and by artificial random potential. Both the localization length and the ...
High-energy transitions of shallow magnetodonors in a GaAs/Al0.3Ga0.7As multiple quantum well
(Iop Publishing Ltd, 2001-10-29)
The high-energy states of a shallow donor in a GaAs/Ga0.7Al0.3As multiple-quantum-well structure subjected to a magnetic field in the growth direction are studied both theoretically and experimentally. Effects due to higher ...
Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/Ga0.7Al0.3As quantum wells
(1999-12-01)
In this work we analyze the relation between the interface microroughness and the full width at half maximum (FWHM) of the photoluminescence (PL) spectra for a GaAs/Ga0.7Al0.3As multiple quantum well (QW) system. We show ...
High-energy transitions of shallow magnetodonors in a GaAs/Al0.3Ga0.7As multiple quantum well
(Iop Publishing Ltd, 2001-10-29)
The high-energy states of a shallow donor in a GaAs/Ga0.7Al0.3As multiple-quantum-well structure subjected to a magnetic field in the growth direction are studied both theoretically and experimentally. Effects due to higher ...
Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/Ga0.7Al0.3As quantum wells
(1999-12-01)
In this work we analyze the relation between the interface microroughness and the full width at half maximum (FWHM) of the photoluminescence (PL) spectra for a GaAs/Ga0.7Al0.3As multiple quantum well (QW) system. We show ...
Light-induced shifts in the electronic and shallow-donor states in GaAs-(Ga,Al)As quantum dots
(Amer Physical SocCollege PkEUA, 2001)
Landé g factor factor in GaAs-Ga1−xAlxAs low-dimensional systems
(Universidad de ValleColombiaFACULTADES DE CIENCIAS NATURALES Y EXACTASMAESTRÍA EN CIENCIAS - FÍSICA, 2009)
We have performed a theoretical study of the electron effective Land ¿e g factor in GaAs-(Ga,Al)As cylindrical low-dimensional heterostructures under and axis-parallel ap- plied magnetic field. Numerical calculations of ...
Estudo experimental de efeitos de spin em heteroestruturas semicondutoras
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2015-04-28)
In this thesis, we have investigated optical and spin properties of semiconductor
nanostructures. Photoluminescence and magneto-photoluminescence measurements
were performed in high magnetic field (B ≤ 15T), in GaBiAs ...