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Hydrostatic-pressure effects on the correlated electron-hole transition energies in GaAs-Ga1-xAlxAs semiconductor quantum wells
(Wiley-v C H Verlag GmbhWeinheimAlemanha, 2006)
Binding energies of excitons trapped by ionized donors in semiconductors
(American Physical Soc, 2001-11-15)
Using the hyperspherical adiabatic approach in a coupled-channel calculation, we present precise binding energies of excitons trapped by impurity donors in semiconductors within the effective-mass approximation. Energies ...
Binding energies of excitons trapped by ionized donors in semiconductors
(American Physical Soc, 2001-11-15)
Using the hyperspherical adiabatic approach in a coupled-channel calculation, we present precise binding energies of excitons trapped by impurity donors in semiconductors within the effective-mass approximation. Energies ...
Binding energies of excitons trapped by ionized donors in semiconductors
(2001-01-01)
Using the hyperspherical adiabatic approach in a coupled-channel calculation, we present precise binding energies of excitons trapped by impurity donors in semiconductors within the effective-mass approximation. Energies ...
Effects of crossed electric and magnetic fields on the electronic and excitonic states in bulk GaAs and GaAs/Ga1-xAlxAs quantum wells
(Amer Physical SocCollege PkEUA, 2007)
Dinâmica excitônica em poços quânticos de semicondutores
([s.n.], 1999)
Screening effects on the spin splitting in n-doped GaAs/AlGaAs quantum wells
(Elsevier Science BvAmsterdamHolanda, 2000)
Similarity measures between excited singlet and triplet electron densities in linear acenes: an application to singlet fission
(Taylor & Francis, 2016)
A theoretical framework for modelling the electronic structure of absorbing molecules that may contribute to explain and even predict phenomena where a singlet exciton is converted to triplet is reported. The pathway is ...
Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1-xAs quantum wells
(Elsevier Science BvAmsterdamHolanda, 2010)
Binding energies of excitons trapped by ionized donors in semiconductors
(American Physical Soc, 2014)