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Vertical stacks of InAs quantum wires in an InP matrix
(Elsevier Science BvAmsterdamHolanda, 2003)
XPS study of the chemical bonding in hydrogenated amorphous germanium-carbon alloys
(Springer-verlagNew YorkEUA, 2000)
Role of V/III ratio on atomic ordering and surface morphology of InGaP layers grown by chemical beam epitaxy
(Elsevier Science BvAmsterdamHolanda, 2003)
Faceting evolution during self-assembling of InAs/InP quantum wires
(Amer Inst PhysicsMelvilleEUA, 2001)
Surface morphologies in GaAs homoepitaxy: Mound formation and evolution
(American Physical SocCollege PkEUA, 1998)
GaN nano- and micro-spheres fabricated selectively on silicon
(Elsevier Science BvAmsterdamHolanda, 2007)
Erbium luminescence from hydrogenated amorphous silicon-erbium prepared by cosputtering
(Amer Inst PhysicsWoodbury, 1997)
Evolution of GaN nanowire morphology during catalyst-induced growth process
(Royal Soc ChemistryCambridgeInglaterra, 2013)
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
(Sociedade Brasileira de Física, 2014)
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
(Sociedade Brasileira de Física, 2004)