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Mostrando ítems 241-250 de 496
Interaction Between Lamellar Twinning And Catalyst Dynamics In Spontaneous Core-shell Ingap Nanowires
(ROYAL SOC CHEMISTRYCAMBRIDGE, 2015)
Diodos emisores de luz orgánicos (Oleds): una alternativa para dispositivos de visualización e iluminación
(Facultad de Ciencias BásicasQuímica, 2020)
THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES
(Iop Publishing Ltd, 1992-03-30)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an ...
THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES
(Iop Publishing Ltd, 1992-03-30)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an ...
Effect of the iron doping on the thermal decomposition of the polymeric precursor for the titanium dioxide powder synthesis
(2014)
The Polymeric Precursor Method has proved suitable for synthesizing reactive powders using low temperatures of calcination, especially when compared with conventional methods. However, during the thermal decomposition of ...
Ligação química em semicondutores
([s.n.], 1983)
UV-Vis Photodetector with Silicon Nanoparticles
(InTech, 2012)
ELECTRONIC BAND STRUCTURE OF THE ORDERED Zn0.5Cd0.5Se ALLOY CALCULATED BY THE SEMI-EMPIRICAL TIGHT-BINDING METHOD CONSIDERING SECOND-NEAREST NEIGHBOR
Aunque la descripción de las aleaciones ternarias semiconductoras se hace tradicionalmente asumiendo la aproximación de compuesto pseudo-binario. Para el caso de aleaciones artificiales de compuestos II-VI y III-V, en las ...
ELECTRONIC BAND STRUCTURE OF THE ORDERED Zn0.5Cd0.5Se ALLOY CALCULATED BY THE SEMI-EMPIRICAL TIGHT-BINDING METHOD CONSIDERING SECOND-NEAREST NEIGHBOR
Aunque la descripción de las aleaciones ternarias semiconductoras se hace tradicionalmente asumiendo la aproximación de compuesto pseudo-binario. Para el caso de aleaciones artificiales de compuestos II-VI y III-V, en las ...