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Synthesis and structural characterization of Eu(III)-doped Zn7Sb2O12
(Springer, 2010-08-01)
In addition to the lanthanide series elements, Europium is one of the chemical elements of greatest interest for the development of species with oxidation state +3 (III), which leads to interesting electronic transitions. ...
Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks
(American Institute of Physics, 2015-03)
In this paper, the degradation characteristics of MOS (Metal-Oxide-Semiconductor) stacks with Al2O3/AlON or Al2O3 only as dielectric layers on InGaAs were studied. The dielectric nitrides are proposed as possible passivation ...
Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
(Pergamon-Elsevier Science Ltd, 2018-11)
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) ...
One- and two-dimensional structures based on gallium nitride
(2021-11-01)
Physical and chemical properties of non-conventional 2D and tubular structures constructed with combinations of Ga/N atoms are proposed and theoretically investigated. The structures were constructed taking as templates ...
Estudio de las propiedades físicas del AlGaAs para posibles aplicaciones en dispositivos y celdas solares
(2019)
En la actualidad, la mayor parte de los dispositivos electrónicos son fabricados a partir de materiales semiconductores. Debido a sus múltiples aplicaciones no solo en dispositivos optoelectrónicas sino también en celdas ...
Effective electronic masses in wurtzite and zinc-blende GaN and AlN
(2001)
The effective electron and hole masses are fundamental quantities of semiconductors, used in numerous analyses of experiments and theoretical investigations. We present calculations of the band structure near the band edges ...
Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
(Pergamon-Elsevier Science Ltd, 2016-01)
In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3,HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration ...
Charge carrier dynamics and optoelectronic properties in quantum tunneling heterostructures
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2021-09-17)
Semiconductor quantum tunneling heterostructures offer a wide range of applications as photosensors, lasers, and circuit elements. However, fundamental questions related to energy transfer mechanisms and the correlation ...