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Trace impurities analysis determined by neutron activation in the PbIsub(2) crystal semiconductor
(Amsterdam: Elsevier, 2003, 2014)
Impurity cluster effects in high- and low-doping semiconductor materials
(2011)
The cluster-like impurity effect in semiconductor materials as Si, GaN, GaAs, and 4H[BOND]SiC for impurity concentrations spanning the metallic to the insulating regimes, i.e., from high- to low-doping concentration, has ...
Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
(2013-01-29)
The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like ...
Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
(2013-01-29)
The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like ...
Transient decay of photoinduced current in semiconductors and heterostructures
(2020-01-01)
Defects that exhibit some sort of lattice relaxation usually present an energy barrier for electron capture, and the possibility of developing the phenomenon known as persistent photoconductivity (PPC). In this effect, ...