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Electronic structure of GaN nanotubes
(2017-02-01)
Nanotube properties are strongly dependent on their structures. In this study, gallium nitride nanotubes (GaNNTs) are analyzed in armchair and zigzag conformations. The wurtzite GaN (0001) surface is used to model the ...
Decay of sup(72)Ga
(2001)
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2
(Univ Fed Sao Carlos, Dept Engenharia Materials, 2013-07-01)
Rare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built ...
Effect of the Clinical Application of the GaA1As Laser in the Treatment of Dentine Hypersensitivity
(2003-10-01)
Objective: The aim of this study was to evaluate the effectiveness of the clinical use of the gallium-aluminum-arsenium (GaAlAs) laser at the maximum and minimum energies recommended by the manufacturer for the treatment ...