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Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiO(x) and TiO(x)N(y) gate dielectric layer
(A V S AMER INST PHYSICS, 2009)
Metal oxide-semiconductor capacitors with TiO(x) deposited with different O(2) partial pressures (30%, 35%, and 40%) and annealed at 550, 750, and 1000 degrees C were fabricated and characterized. Fourier transform infrared, ...
Photodetection With Gate-Controlled Lateral BJTs from Standard CMOS Technology
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2013)
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
(2001-01-01)
A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries ...
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
(2001-01-01)
A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries ...
A Complementary Metal Oxide Semiconductor sensor array based detection system for Laser Induced Breakdown Spectroscopy: Evaluation of calibration strategies and application for manganese determination in steel
(Pergamon-elsevier Science LtdOxfordInglaterra, 2008)
Desenvolvimento e implementação de chips dedicados para um novo decodificador de códigos corretores de erros baseado em conjuntos de informação
(Universidade Tecnológica Federal do ParanáCuritibaPrograma de Pós-Graduação em Engenharia Elétrica e Informática Industrial, 2013-08-22)
Error-correcting codes are present in almost all modern data communications and data storage systems. Errors during these operations are practically inevitable because of noise and interference in communication channels ...