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Mostrando ítems 11-20 de 23
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K
(2017)
© 2017 Elsevier LtdThe linearity of triple gate nanowire transistors (NWs) implemented on a Silicon-On-Insulator (SOI) substrate is investigated in this work considering temperature (T) influence. The analysis is performed ...
Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
(2015)
© 2014 Elsevier Ltd. All rights reserved.Three techniques to implement mechanical stress in n-channel Multiple Gate MOSFETs (MuGFETs) are investigated through 3D simulations and transconductance measurements. They are: ...
Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100 K
(2017)
© 2016 Elsevier LtdThis work presents an analysis of the performance of silicon triple gate SOI nanowires aiming the investigation of analog parameters for both long and short channel n-type and p-MOSFETs. Several nanowires ...
Desempenho de transistores GC SOI MOSFETs submicrométricos
(Centro Universitário da FEI, São Bernardo do Campo, 2019)
Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
(2019)
© 2019 Elsevier LtdThis work evaluates the operation of p-type Si0.7Ge0.3-On-Insulator (SGOI) nanowires from room temperature down to 5.2 K. Electrical characteristics are shown for long channel devices comparing narrow ...
High Temperature Influence on the Trade-off between gm/IDand fTof nanosheet NMOS Transistors with Different Metal Gate Stack
(2021-09-01)
This work presents an experimental analysis of the trade-off between transistor efficiency (gm/ID) and unit gain frequency (fT) of nanosheet field effect transistors (NSFETs) with different metal gate (MG) stack, considering ...
Influência de parâmetros tecnológicos e geométricos sobre o desempenho de transistores SOI de canal gradual
(Centro Universitário da FEI, São Bernardo do Campo, 2015)
Este trabalho tem como objetivo estudar a influência de parâmetros tecnológicos, geométricos e de polarização sobre o comportamento analógico dos transistores Silício-Sobre-Isolante nMOSFET de Canal Gradual (GC SOI), ...