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Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy
(American Institute of Physics (AIP), 1999-10-15)
Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy
(American Institute of Physics (AIP), 1999-10-15)
Control of the morphology transition for the growth of cubic GaN-AlN nanostructures
(American Institute of Physics (AIP), 2013)
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
(Elsevier B.V., 2003-05-01)
The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates ...
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
(Elsevier B.V., 2003-05-01)
The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates ...
Optical properties of cubic AlGaN
(Cambridge Journals, 2013)
Optical properties of cubic AlGaN
(Cambridge Journals, 2002-11-30)
Optical properties of cubic AlGaN
(Cambridge Journals, 2002-11-30)
Critical concentration for the doping-induced metal–nonmetal transition in cubic and hexagonal GaN
(2002-09-01)
The critical concentration for the metal–nonmetal transition has been calculated for n-type and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three different computational methods have been ...