Buscar
Mostrando ítems 11-20 de 226
Preparação e caracterização de filmes finos de 'BA''BI IND.2''TA IND.2''O IND.9(BBT)' e 'BA''BI IND.2''NB IND.2''O IND.9(BBN)'
(Universidade Estadual Paulista (Unesp), 2014)
Effect of the excess of bismuth on the morphology and properties of the BaBi2Ta2O9 ceramics
(Elsevier B.V., 2005-03-01)
In this study, the effect of bismuth content on the crystal structure, morphology and electric properties of barium-bismuth-tantalate (BBT) ceramics was explored with the aid of X-ray diffraction (XRD), scanning electron ...
Phase formation and characterization of BaBi2Ta2O9 obtained by mixed oxide procedure
(Elsevier B.V., 2004-04-01)
Ferroelectric layefed-perovskite BaBi2Ta2O9 (BBT) has been prepared successfully by solid-state reaction. The influence of pressure and temperature/time annealing regime on the BBT phase formation was analyzed. The powders ...
Phase formation and characterization of BaBi2Ta2O9 obtained by mixed oxide procedure
(Elsevier B.V., 2004-04-01)
Ferroelectric layefed-perovskite BaBi2Ta2O9 (BBT) has been prepared successfully by solid-state reaction. The influence of pressure and temperature/time annealing regime on the BBT phase formation was analyzed. The powders ...
Thickness dependence of leakage current in BaBi2Ta2O9 thin films
(American Institute of Physics (AIP), 1999-07-26)
BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity ...
First Principles Investigation of SrBi2Ta2O9
(Taylor & Francis Ltd, 2000-07)
The electronic structure of SrBi2Ta2O9 (SBT) is investigated from first-principles, within the local density approximation, using the full-potential linearized augmented plane wave (LAPW) method. The results show that, ...
Investigation of Ferroelectric Layered Perovskite Barium Bismuth Tantalate Prepared by Solid-State Reaction
(Taylor & Francis Ltd, 2014)
Thickness dependence of leakage current in BaBi2Ta2O9 thin films
(American Institute of Physics (AIP), 2014)