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Influence of laser excitation on raman and photoluminescence spectra and FTIR study of porous silicon layers
(Sociedade Brasileira de Física, 1999)
A porous silicon lm (PS) was investigated by FTIR, Raman and photoluminescence (PL) spectroscopies. The Raman and PL spectra were obtained using four different laser excitations: 488, 514, 633 and 782 nm. The analysis of ...
Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells
(2010-04-12)
In this work the electronic structure of undoped AlGaAs/GaAs wide parabolic quantum wells (PQWs) with different well widths (1000 and 3000 ) were investigated by means of photoluminescence (PL) measurements. Due to the ...
Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells
(2010-04-12)
In this work the electronic structure of undoped AlGaAs/GaAs wide parabolic quantum wells (PQWs) with different well widths (1000 and 3000 ) were investigated by means of photoluminescence (PL) measurements. Due to the ...
Experimental and theoretical studies of photoluminescence in Zns obtained by microwave-assisted solvothermal method
(2013)
A shift of the photoluminescence (PL) emission was observed in ZnS prepared by microwave assisted solvothermal method with the increase of the time in microwave. In this work we reported a study of the optical behavior ...
Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
(Institute of Electrical and Electronics Engineers, 2006-12)
Hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide (Si-nc/SiO2) composites were obtained from SiyO1-y (y=0.36, 0.42) thin films deposited by plasma-enhanced chemical vapor deposition. The unhydrogenated composites ...
Fabricación y caracterización de diodos electro-luminiscentes de silicio poroso
(Revista Mexicana de Física, 2009)