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Background of Technical Specifications forSubstation Equipment exceeding 800 kV AC
(CIGRE, 2011-04)
In 2008, CIGRÉ WG A3.22 published Technical Brochure 362: ?Technical Requirements for Substation Equipment exceeding 800 kV AC?. A second TB is now available which further develops the background information and, where ...
Synthesis, properties, and two-dimensional adsorption characteristics of 5-amino[6]hexahelicene
(Willy, 2016)
A convergent synthesis of racemic 5-amino[6]hexahelicene
is described. Cross-coupling reactions are used to
assemble a pentacyclic framework, and a metal-catalyzed
ring-closure comprises the final step. The enantiomers ...
Ultra High Voltage IC design with a 400V CMOS technology: a dimmer application
(Universidad Católica del Uruguay, 2020-06-23)
The advent of Ultra High Voltage (UHV) technologies for integrated circuit fabrication opens up new possibilities for the design of circuits that connect directly to the power distribution network, with applications in the ...
Ultra High Voltage IC design with a 400V CMOS technology: a dimmer application
(Universidad Católica del Uruguay, 2020-06-23)
The advent of Ultra High Voltage (UHV) technologies for integrated circuit fabrication opens up new possibilities for the design of circuits that connect directly to the power distribution network, with applications in the ...
Bio-inspired nanocatalysts for the oxygen reduction reaction
(Nature, 2013-12)
Electrochemical conversions at fuel cell electrodes are complex processes. In particular, the oxygen reduction reaction has substantial overpotential limiting the electrical power output efficiency. Effective and ...
Criterios para la selección de aisladores en líneas de EHV y UHV bajo condiciones de contaminación
(Universidad de La Salle. Facultad de Ingeniería. Ingeniería Eléctrica, 2005)
Room temperature UHV-Deposited titanium monoxide films on oxidized polycrystalline copper
(2001)
Polycrystalline copper films thicker than 100 nm were evaporated on silicon wafers with their native oxide under ultrahigh vacuum conditions leading to an rms roughness of ∼2 nm of the copper film. X-ray photoelectron ...