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Controle de caos em amostras semi-isolantes de arseneto de gálio
(Universidade Federal de Minas GeraisUFMG, 2008-08-14)
Low frequency current oscillations have been usually investigated under the influence of the external applied bias, the temperature and the illumination. A parallel applied magnetic field has been used in the present work ...
Estudo das estruturas de discordâncias cristalinas em arseneto de gálio
(Universidade Federal de Minas GeraisUFMG, 2009-03-27)
We employ ab initio calculations to investigate 90º partial dislocations ingallium arsenide. In a binary semiconductor like GaAs, two types of dislocations are present. In the a(ß) dislocation, there are two lines of arsenic ...
Localização de pontos quânticos semicondutores via nanolitografia por oxidação anódica
(Universidade Federal de Minas GeraisUFMG, 2009-03-10)
Research on nanostrucured semiconductor heterostructures has remarkably increased over the last decades. The 1, 55 um emission wavelenght receives special attention due to its many applications for telecommunications. ...
Nanofios de arseneto de gálio e arseneto de alumínio
(Universidade Federal de Santa MariaCentro de Ciências Naturais e Exatas, 2008-01-30)
We present a first principle study of both bulk e nanowire phases of GaAs and AlAs. We first reproduced the known properties of the bulk materials and then applied the same methodology to study the properties with the ...
Crescimento de nanofios auto-sustentados de arseneto de índio por epitaxia por feixes moleculares
(Universidade Federal de Minas GeraisUFMG, 2010-02-25)
This Thesis reports the experimental and theoretical works related to the growth and characterization of free-standing gallium indium arsenide nanowires grown by Molecular Beam Epitaxy (MBE). The growth mechanisms of ...
Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Terapia laser (AsGa) na sinovite aguda experimental em pôneis
(Universidade Federal de Santa MariaBRMedicina VeterináriaUFSMPrograma de Pós-Graduação em Medicina Veterinária, 2008-02-01)
An experimental synovitis model of the radio-carpal joint was induced in 8 male intact ponies with an intra-articular injection of 0.25ml of Freund s complete adjuvant. Four ponies
had the affected joint irradiated with ...
Dinâmica do pseudo-spin de exciton-polariton em microcavidades.
(Universidade Federal de Minas GeraisUFMG, 2010-08-09)
This dissertation aims to report the information derived from the study of the dynamics pseudo-spin state of the exciton-polariton formed in a semiconductor microcavity based on Gallium Arsenide. Exciton-polariton state ...
Influência do laser arseneto de gálio-alumínio em feridas cutâneas de ratos
(Fisioterapia em Movimento, 2017)