Actas de congresos
Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor
Fecha
2014-01-01Registro en:
Electroceramics Vi. Stafa-zurich: Trans Tech Publications Ltd, v. 975, p. 248-253, 2014.
1022-6680
10.4028/www.scientific.net/AMR.975.248
WOS:000348023200041
7730719476451232
0000-0001-5762-6424
Autor
Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
Institución
Resumen
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.