Artículos de revistas
Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique
JOURNAL OF NON-CRYSTALLINE SOLIDS, AMSTERDAM, v. 358, n. 5, supl. 1, Part 3, pp. 880-884, 36951, 2012
Diaz-Droguett, D. E.
Albertin, K. F.
Fuenzalida, V. M.
In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si-K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.