Artículos de revistas
Weak antilocalization in HgTe quantum wells near a topological transition
Fecha
2010Registro en:
JETP LETTERS, v.91, n.7, p.347-350, 2010
0021-3640
10.1134/S0021364010070052
Autor
OLSHANETSKY, E. B.
KVON, Z. D.
Gusev, Gennady
MIKHAILOV, N. N.
DVORETSKY, S. A.
PORTAL, J. C.
Institución
Resumen
The anomalous alternating magnetoresistivity in HgTe quantum wells with thicknesses of 5.8 and 8.3 nm, i.e., near the transition from the direct band spectrum to an inverted spectrum, has been revealed and analyzed. It has been shown that the revealed anomalous alternating magnetoresistivity in wells with an inverted spectrum is well described by the theory developed by S.V. Iordanskii et al. [JETP Lett. 60, 206 (1994)] and W. Knap et al. [Phys. Rev. B 53, 3912 (1996)]. A detailed comparison of the experimental data with the theory indicates the presence of only the cubic term in the spin splitting of the electronic spectrum. The applicability conditions of the mentioned theory are not satisfied in a well with a direct gap and, for this reason, such a certain conclusion is impossible. The results indicate the existence of a strong spin-orbit interaction in symmetric HgTe quantum wells near the topological transition.