Artículos de revistas
Silicon Field-Emission Devices Fabricated Using the Hydrogen Implantation-Porous Silicon (HI-PS) Micromachining Technique
Fecha
2008Registro en:
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, v.17, n.5, p.1263-1269, 2008
1057-7157
10.1109/JMEMS.2008.927743
Autor
Dantas, Michel Oliveira da Silva
Galeazzo, Elisabete
Peres, Henrique Estanislau Maldonado
Kopelvski, Maycon Max
Fernandez, Francisco Javier Ramirez
Institución
Resumen
This paper presents a relatively simple method to fabricate field-emitter arrays from silicon substrates. These devices are obtained from silicon micromachining by means of the HI-PS technique-a combination of hydrogen ion implantation and porous silicon used as sacrificial layer. Also, a new process sequence is proposed and implemented to fabricate self-aligned integrated field-emission devices based on this technique. Electrical characteristics of the microtips obtained show good agreement with the Fowler-Nordheim theory, which are suitable for the proposed application.