Artículos de revistas
Carrier dynamics in stacked InP/GaAs quantum dots
Registro en:
Applied Physics Letters. Amer Inst Physics, v. 91, n. 12, 2007.
0003-6951
WOS:000249667200042
10.1063/1.2789705
Autor
Veloso, AB
Nakaema, MKK
de Godoy, MPF
Lopes, JMJ
Iikawa, F
Brasil, MJSP
Bortoleto, JRR
Cotta, MA
Fichtner, PFP
Morschbacher, M
Madureira, JR
Institución
Resumen
We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment. 91 12