Artículos de revistas
REFRACTIVE-INDEX STEP AND OPTICAL CONFINEMENT IN GA0.86IN0.14AS0.13SB0.87/GA0.73AL0.27AS0.02SB0.98 DOUBLE-HETEROSTRUCTURE LASERS EMITTING AT 2.2-MU-M
Registro en:
Electronics Letters. Iee-inst Elec Eng, v. 29, n. 14, n. 1240, n. 1241, 1993.
0013-5194
WOS:A1993LW31700006
10.1049/el:19930829
Autor
LOURAL, MSS
MOROSINI, MBZ
HERRERAPEREZ, JL
VONZUBEN, AAG
DASILVEIRA, ACF
PATEL, NB
Institución
Resumen
Using theoretical fitting to measured transverse far field patterns in Ga0.86In0.14As0.13Sb0.87/Ga0.73Al0.27As0.02Sb0.98 DH lasers emitting at 2.2 mum we estimated the value of the active layer refractive index as 3.78. This value, higher than assumed earlier based on theoretical calculations, ensures good optical confinement for this kind of heterostructure and provides a good theoretical fit with the authors' experimental data of threshold current density against active layer thickness. 29 14 1240 1241