Actas de congresos
Proton Radiation Hardening Of Silicon Oxynitride Gate Nmosfets Formed By Nitrogen Implantation Into Silicon Prior To Oxidation
Registro en:
Proceedings Of The European Conference On Radiation And Its Effects On Components And Systems, Radecs. , v. 1, n. 2, p. 229 - 233, 2002.
2-s2.0-0036995475
Autor
Diniz J.A.
Fo J.G.
Zakia M.B.P.
Doi I.
Swart J.W.
Institución
Resumen
Silicon oxynitride (SiOxNy) insulators have been obtained by low-energy nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. Theses films have been used as gate insulators in enhancement nMOSFETs and MOS capacitors. MOS capacitors were used to obtain capacitance-voltage (C-V) measurements. A relative dielectric constant of 3.9 was adopted to extract the Equivalent Oxide Thickness (EOT) of films from C-V curves, resulting in values between 5nm and 12nm. nMOSFETs were bombarded with H+ ion beams (energy of O.17MeV and doses of 0, 1012, 1013 and 1O14 protons/cm2) to investigate radiation hardening. nMOSFET electrical characteristics, such as threshold voltage (VT), transconductances (Gm) and sub-threshold slope (S), were extracted before and after proton radiation. For high dose bombardment, VT, S are increased and Gm is reduced. These oxynitride gate device performance degradation was significant only for doses > 1012 protons/cm2. 1 2 229 233 Gopal, R., Ahmad, S., Effect of proton-induced damage on the performance of enhancement mode MOSFET (1998) Phys. Stat. Solidi (a), 168, pp. 129-141. , Jul Fleetwood, D.M., Winokur, P.S., Riewe, L.C., Flament, O., Paillet, P., Leray, J.L., The role of electron transport and trapping in MOS total-dose modeling (1999) IEEE Trans. on Nuclear Science, 46 (6), pp. 1519-1525. , Dec Saks, N.S., Simons, M., Fleetwood, D.M., Yount, J.T., Lenahan, P.M., Klein, R.B., Radiation effects in oxynitrides grown in N2O (1994) IEEE Trans. on Nuclear Science, 41 (6), pp. 1854-1863. , Dec Fleetwood, D.M., Saks, N.S., Oxide, interface, and border traps in thermal, N2O, and nitrided oxides (1996) J. Appl. Phys, 79 (3), pp. 1583-1594. , Feb Diniz, J.A., Tatsch, P.J., Kretly, L.C., Queiroz, J.E.C., Godoy Fo, J., Formation of ultra-thin oxinitride films by low-energy nitrogen implantation (1995) Mat. Res. Soc. Proceedings, Boston, MA, 396. , Dec Diniz, J.A., Sotero, A.P., Lujan, G.S., Tatsch, P.J., Swart, J.W., High quality ultra-thin oxynitride films formed by low-energy nitrogen implantation into silicon with additional plasma or thermal oxidation (2000) Nuclear Instruments and Methods in Physics Research, B, 166-167, pp. 64-69. , May Messenger, S.R., Xapsos, M.A., Burke, E.A., Walters, R.J., Summers, G.P., Proton displacement damage and ionizing dose for shielded devices in space (1997) IEEE Trans. on Nuclear Science, 44 (6), pp. 2169-2173. , Dec Ziegler, J.F., Biersack, J.B., Littmark, U., (1985) The Stopping and Range of Ions in Solids, 1. , Pergammon Press: New York SRIM Version 96.00 Rax, B.G., Lee, C.I., Johnston, A.H., Degradation of precision reference devices in space environments (1997) IEEE Trans. on Nuclear Science, 44 (6), pp. 1939-1944. , Dec Osborn, J.V., Lacoe, R.C., Mayer, D.C., Yabiku, G., Total dose hardness of three commercial CMOS microelectronics foundries (1998) IEEE Trans. on Nuclear Science, 45 (3), pp. 1458-1463. , Jun Diniz, J.A., Tatsch, P.J., Prudenzi, M.A.A., Krely, L.C., Herion, J.K., Nitrided-oxide films formed by low-energy and medium-dose nitrogen implantation (1996) Proceedings of XI Congress of the Brazilian Microelectronics Society, Águas de Lindoia-SP-Brazil, 1, pp. 402-407. , Jul Kamgar, A., Clemens, J.T., Ghetti, A., Liu, C.T., Lloyd, E.J., Reduced electron mobility due to nitrogen implant prior to the gate oxide growth (2000) IEEE Electron Dev. Lett., 21 (5), pp. 227-229. , May