Actas de congresos
Charge Buildup Effects In Asymmetric P-type Resonant Tunneling Diodes
Registro en:
Microelectronics Journal. , v. 36, n. 3-6, p. 356 - 358, 2005.
262692
10.1016/j.mejo.2005.02.055
2-s2.0-33644535133
Autor
Galvao Gobato Y.
Brasil M.J.S.P.
Camps I.
De Carvalho H.B.
Dos Santos L.F.
Marques G.E.
Henini M.
Eaves L.
Hill G.
Institución
Resumen
We have investigated p-doped GaAs-AlAs resonant tunneling devices with asymmetric barriers under optical excitation. Transport and photoluminescence measurements were performed under identical bias conditions as a function of the light excitation intensity. We have observed the development of additional peaks, induced by illumination, between the main light- and heavy-hole resonances in the current-voltage characteristics (I(V)). We describe the behavior of these photo-induced peaks under a magnetic field parallel to the current. We propose that the observed properties are related to resonant tunneling of photoinduced electrons and associated excitonic effects. © 2005 Elsevier Ltd. All rights reserved. 36 3-6 356 358 Goldman, V.J., Tsui, D.C., Cunninghan, J.E., (1987) Phys. Rev. B, 35, p. 9387 Leadbeater, M.L., Alves, E.S., Eaves, L., Henini, M., Hughes, O.H., Sheard, F.W., Toombs, G.A., (1988) Semicond. Sci. Technol., 3, p. 1060 Wu, S.S., Chang, K.H., Lee, C.P., Chang, C.Y., Liu, D.G., Liou, C., (1991) Appl. Phys. Lett., 29, p. 87 Skolnick, M.S., Hayes, D.G., Simmonds, P.E., Higgs, A.W., Smith, G.W., Hutchinson, H.J., Whitehouse, C.R., Halliday, D.P., (1990) Phys. Rev. B, 41, p. 10754 Skolnick, M.S., Simmonds, P.E., Hayes, D.G., Higgs, A.W., Smith, G.W., Pitt, A.D., Whitehouse, C.R., Hughes, O.H., (1990) Phys. Rev. B, 42, p. 3069 Young, J.F., Wood, B.M., Aers, G.C., Devine, R.L.S., Liu, H.C., Landheer, D., Buchanan, M., Mandeville, P., (1988) Phys. Rev. Lett., 60, p. 2085 Tarucha, S., Ploog, K., (1988) Phys. Rev. B, 38, p. 4198 Andrews, S.R., Tuberfield, A.J., Miller, B.A., (1993) Phys. Rev. B, 47, p. 15705 Vodjdani, N., Chevoir, F., Thomas, D., Cote, D., Bois, P., Costard, E., Delaitre, S., (1989) Appl. Phys. Lett., 55, p. 1528 Hayden, R.K., Eaves, L., Henini, M., Maude, D.K., Portal, J.C., Hill, G., (1992) Appl. Phys. Lett., 60, p. 1474 Turner, T.S., Eaves, L., While, C.R.H., Henini, M., Hill, G., (1994) Semicond. Sci. Technol., 9, p. 552 Buhmann, H., Wang, J., Mansouri, L., Beton, P.H., Eaves, L., Heath, M., Henini, M., (1994) Sol. Stat. Electr., 37, p. 973 Cao, S.M., Willander, M., (1997) J. Appl. Phys., 81, p. 6221 Sakai, J.-W., Fromhold, T.M., Beton, P.H., Eaves, L., Henini, M., Main, P.C., Sheard, F.W., Hill, G., (1993) Phys. Rev. B, 48, p. 5664 Leadbeater, M.L., Alves, E.S., Eaves, L., Henini, M., Hughes, O.H., Celeste, A., Portal, J.S., Pate, M.A., (1989) Phys. Rev. B, 39, p. 3438