Artículos de revistas
Type-i Optical Emissions In Gesi Quantum Dots
Registro en:
Applied Physics Letters. , v. 91, n. 5, p. - , 2007.
36951
10.1063/1.2764113
2-s2.0-34547690930
Autor
Gomes P.F.
Iikawa F.
Cerdeira F.
Larsson M.
Elfving A.
Hansson G.V.
Ni W.-X.
Holtz P.-O.
Institución
Resumen
The authors studied the optical emission of GeSi quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 °C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications. © 2007 American Institute of Physics. 91 5
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