Actas de congresos
Electrical Properties Of Individual And Small Ensembles Of Inas/inp Nanostructures
Registration in:
Physica Status Solidi (a) Applications And Materials Science. , v. 203, n. 6, p. 1353 - 1358, 2006.
18626300
10.1002/pssa.200566109
2-s2.0-33646763887
Author
Vicaro K.O.
Gutierrez H.R.
Bortoleto J.R.R.
Nieto L.
Von Zuben A.A.G.
Seabra A.C.
Schulz P.A.
Cotta M.A.
Institutions
Abstract
We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA. 203 6 1353 1358 Tanaka, I., Kamiya, I., Sakaki, H., Qureshi, N., Allen Jr., S.J., Petroff, P.M., (1999) Appl. Phys. Lett., 74, p. 844 Tanaka, I., Kamiya, I., Sakaki, H., (1999) J. Cryst. Growth, 201-202, p. 1194 Vicaro, K.O., Cotta, M.A., Gutiérrez, H.R., Bortoleto, J.R.R., (2003) Nanotechnology, 14, p. 509 Houzé, F., Meyer, R., Schneegans, O., Boyer, L., (1996) Appl. Phys. Lett., 69 (13), p. 1975 Buehler, T.M., Reilly, D.J., Starrett, R.P., Chan, V.C., Hamilton, A.R., Dzurak, A.S., Clark, R.G., (2004) J. Appl. Phys., 96 (11), p. 6827. , and references therein Gutiérrez, H.R., Cotta, M.A., Bortoleto, J.R.R., De Carvalho, M.M.G., (2002) J. Appl. Phys., 92, p. 7523 Gutiérrez, H.R., Cotta, M.A., De Carvalho, M.M.G., (2001) Appl. Phys. Lett., 79, p. 3854 Gutiérrez, H.R., Magalhães-Paniago, R., Bortoleto, J.R.R., Nieto, L., Cotta, M.A., (2005), submitted for publicationKirton, M.J., Uren, M.J., (1989) Adv. Phys., 38 (4), pp. 367-468 Éfros, A.L., Shklovskii, B.I., (1975) J. Phys. C, Solid State Phys., 8 (4), pp. L49 Dunford, J.L., Suganuma, Y., Dhirani, A.-A., Statt, B., (2005) Phys. Rev. B, 72, p. 075441