dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorFraga, M. A.
dc.creatorMassi, M.
dc.creatorOliveira, I. C.
dc.creatorCruz, Nilson Cristino da
dc.creatorSantos Filho, S. G. dos
dc.date2014-05-20T15:32:14Z
dc.date2016-10-25T21:21:02Z
dc.date2014-05-20T15:32:14Z
dc.date2016-10-25T21:21:02Z
dc.date2009-01-01
dc.date.accessioned2017-04-06T09:21:31Z
dc.date.available2017-04-06T09:21:31Z
dc.identifierMaterials Science Forum, v. 615 617, p. 327-330.
dc.identifier0255-5476
dc.identifierhttp://hdl.handle.net/11449/130388
dc.identifierhttp://acervodigital.unesp.br/handle/11449/130388
dc.identifierhttp://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.327
dc.identifierWOS:000265961100078
dc.identifier2-s2.0-79251649240
dc.identifierhttp://www.scientific.net/MSF.615-617.327
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/940932
dc.descriptionAmorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.
dc.languageeng
dc.publisherTrans Tech Publications Ltd
dc.relationMaterials Science Forum
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectSilicon carbon nitride
dc.subjectThermal annealing
dc.subjectResistivity
dc.subjectElastic modulus
dc.subjectHardness
dc.titleElectrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films
dc.typeOtro


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