Artículo de revista
Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films
Fecha
2018Registro en:
Optik, Volumen 156, 2018, Pages 728–737
00304026
10.1016/j.ijleo.2017.12.021
Autor
Voisin, Leandro
Ohtsuka, Makoto
Petrovska, Svitlana
Sergiienko, Ruslan
Nakamura, Takashi
Institución
Resumen
Amorphous indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide
content were prepared by direct current (DC) sputtering of ITO target in mixed argonoxygen atmosphere onto glass substrates preheated at 523K. The films were subsequently
heat-treated in air at different temperatures in the range of 523–923K for 60 min. The
use of oxygen during deposition resulted in highly transparent (>80%) in visible and
infrared ranges of spectra films. It has been found from the electrical measurements
that as-deposited films under optimum sputtering conditions at working gas flow rate of
Q(Ar)/Q(O2) = 50 sccm/0.5 sccm showed minimum volume resistivity of about 694 cm.
As-deposited thin films obtained under the optimum condition showed amorphous structure. Improving of crystallisation has been observed with increasing heat treatment
temperature. It has been found that DC sputtered films with decreasing amount of indium
oxide have smooth surface in contrast to typical ITO (90 mass% indium oxide).