Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:44:09Z
dc.date.available2018-12-11T16:44:09Z
dc.date.created2018-12-11T16:44:09Z
dc.date.issued2016-10-27
dc.identifierElectronics Letters, v. 52, n. 22, p. 1871-1873, 2016.
dc.identifier0013-5194
dc.identifierhttp://hdl.handle.net/11449/169055
dc.identifier10.1049/el.2016.2901
dc.identifier2-s2.0-84992220740
dc.description.abstractHereby a novel thin film-based configuration of redox resistive switching memory (ReRAM) based on cheap and abundant copper sulphide (CuS) is reported. The devices working mechanism is based on the junction of two layers of CuS stacked nanocrystal with different stoichiometry (CuS and Cu2-xS). CuS thin films were deposited using a fast, easy and low-temperature drop-casting technique. The devices shown memresistive characteristics, with well-defined ON and OFF resistance states, inducible by voltage pulses. A polynomial model has been proposed to characterise the devices considering both space-charge-limited current and ionic diffusion.
dc.languageeng
dc.relationElectronics Letters
dc.relation0,407
dc.rightsAcesso aberto
dc.sourceScopus
dc.titlePrintable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
dc.typeArtículos de revistas


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