Artículos de revistas
High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics
Fecha
2006-10-01Registro en:
Journal of Applied Physics. Melville: Amer Inst Physics, v. 100, n. 7, 4 p., 2006.
0021-8979
10.1063/1.2357419
WOS:000241248000067
WOS000241248000067.pdf
Autor
Universidade Estadual Paulista (Unesp)
Institución
Resumen
CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.