Artículos de revistas
Electronic ion energy loss calculations on the basis of the binary encounter approximation
Fecha
1999Registro en:
Journal of Nuclear Materials, Volumen 264, Issue 1-2, 2018, Pages 133-140
00223115
10.1016/S0022-3115(98)00479-6
Autor
Ordonez, C. A.
Bickel, D. R.
Venezia, V. C.
McDaniel, F. D.
Malteson, S. E.
Molina Gálvez, Mario
Institución
Resumen
Electronic ion energy loss calculations on the basis of the binary encounter approximation are presented for protons in oxygen, nitrogen and silicon. Calculations using both an analytical approach as well as a Monte Carlo approach are found to agree well with experimental data even down to energies below the stopping cross section maximum. Energy loss calculations for protons in silicon under channeling conditions are included and predictions are made for channeling in the 〈110〉 direction at low energies (5-500 keV). © 1999 Elsevier Science B.V. All rights reserved.