Buscar
Mostrando ítems 21-30 de 231
Recent research developments in SnO2-based varistors
(Elsevier B.V., 2005-03-15)
This paper discusses some advances in research conducted on SnO2-based electroceramics. The addition of different dopants, as well as several thermal treatments in oxidizing and inert atmospheres, were found to influence ...
Electrical properties of the SnO2-based varistor
(1998-12-01)
The non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction ...
Surface states influence in Al Schottky barrier of Ge nanowires
(2013-01-01)
Aiming the understanding of how the application to devices is affected by the presence of oxygen in semiconductor nanostructures, Al/Ge-nanowires Schottky devices were fabricated without any previous treatment to remove ...
Cerâmicas eletrônicas à base de SnO2 e TiO2
(Associação Brasileira de Cerâmica, 2001-09-01)
Este trabalho mostra o avanço de pesquisas realizadas em cerâmicas eletrônicas à base de SnO2 e TiO2. A adição de diferentes dopantes, bem como a realização de tratamentos térmicos em atmosfera oxidante e redutora, influenciam ...
Cerâmicas eletrônicas à base de SnO2 e TiO2
(Associação Brasileira de Cerâmica, 2001-09-01)
Este trabalho mostra o avanço de pesquisas realizadas em cerâmicas eletrônicas à base de SnO2 e TiO2. A adição de diferentes dopantes, bem como a realização de tratamentos térmicos em atmosfera oxidante e redutora, influenciam ...
Photoinduced Schottky Barrier in Photorefractive Materials
(Amer Physical SocCollege PkEUA, 2010)
Simple algebraic method to study the effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier of metal/n-GaAs
(Sociedad Mexicana de Física, 2015-07)
The effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier diode of metal/n-GaAs are studied using a simple algebraic method. The method relies on the dependence of the parameters of the ...
A study on FET devices based on Schottky barrier and metal-gate/high-k stacked thin-films
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2017)
A study on FET devices based on Schottky barrier and metal-gate/high-k stacked thin-films
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2017)