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Theory of non-steady state electrical characteristics of metal-insulator-metal structures with schottky barriers and exponentially distributed impurity states
(1996-12-01)
We discuss non-steady state electrical characteristics of a metal-insulator-metal structure. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level ...
Theory of non-steady state electrical characteristics of metal-insulator-metal structures with schottky barriers and exponentially distributed impurity states
(1996-12-01)
We discuss non-steady state electrical characteristics of a metal-insulator-metal structure. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level ...
THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES
(Iop Publishing Ltd, 1992-03-30)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an ...
THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES
(Iop Publishing Ltd, 1992-03-30)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an ...
Characterization of Aluminum Contacts on Cobalt Oxide Films Grown with Different Oxygen Concentrations
(2019-01-01)
The electronic transport in a metal/semiconductor/metal (MSM) structure, consisting of cobalt oxide films with aluminum (Al) contacts, was investigated. The cobalt oxides were grown by direct current (DC) magnetron sputtering ...
Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
(Ieee, 2020-01-01)
beta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both ...
UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes
(2021-01-01)
The UV photocurrent response of thin films of wide bandgap semiconductors such as zinc oxide (ZnO) can be applied to a great number of electronic devices aiming applications in environmental sensing or UV-detection. ...
Sensores ópticos de silicio con doble barrera con amplificación de señal
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2007)