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Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method
(2002-01-01)
Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In ...
Dielectric and ferroelectric properties of PZT and PT thin films for saw sensors applications
(2004-12-01)
It is very important for the building of the SAW devices to study dielectric and ferroelectrics properties because every SAW device is based in piezoelectric effect that it is made up to transform an electric sign in the ...
Temperature and stoichiometry effect on microstructural and ferroelectric properties of Pb(Zr1-xTix)O3 thin films prepared by chemical soulution deposition
(2004-05-10)
Lead zirconate titanate (PZT) solutions were prepared using a polymeric precursor method, Zr n-propoxide and Ti i-propoxide were used as starting materials with ethylene glycol and water as solvents. The PZT solution was ...
Ferroelectric switching and dielectric response of P(VDF-TrFE)/PMMA blends
(2005-12-01)
The ferroelectric and the dielectric behaviors of binary blends formed by an equi-molar Poly(vinylidene fluoride trifluoroethylene) copolymer [P(VDF-TrFE)] and Poly(methyl methacrylate) [PMMA] were investigated, for several ...
Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films
(2012-10-31)
Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film ...
Crystallographic, dielectric and optical properties of SrBi 2Ta2O9 thin films prepared by the polymeric precursor method
(2002-01-01)
Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (Pt/Ti/SiO 2 /Si), n -type (100)-oriented and p -type (111)-oriented silicon wafers, and fused silica) by the solution deposition ...
Influence of oxygen atmosphere on LiNbO3 thin films prepared by Pechini process
(2004-07-27)
Thin films of lithium niobate were deposited on the Pt/Ti/SiO2 (111) substrates by the polymeric precursor method (Pechini process). Annealing in static air and oxygen atmosphere was performed at 500°C for 3 hours. The ...
Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method
(Materials Research Society, 2005-01-01)
Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase ...
Dielectric and fatigue properties of Pb(Zr0.53Ti 0.47)O3 thin films prepared from oxide precursors method
(2005-06-20)
Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase ...
Influence of oxygen flow on crystallization and morphology of LiNbO 3 thin films
(2002-01-01)
Polymeric precursor solution (Pechini method) was used to deposit LiNbO 3 thin films by spin-coating on (100) silicon substrates. X-ray diffraction data of thin films showed that the increase of oxygen flow promotes a ...