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The influence of thermal treatment on the preparation of PNM and PMN-PT thin films
(Elsevier B.V., 2003-03-01)
Ferroelectric thin films belong to a class of materials with great technological importance in optic fibers, micro-electromechanical systems, and microprocessors and computers memories.The (1-x)PbMg1/3Nb2/3O3(x)PbTiO3 ...
NICKEL TROPOLONATE COMPLEXES AS PRECURSORS FOR THE DIRECT PHOTODEPOSITION OF NiO THIN FILMS
(Sociedad Chilena de Química, 2004)
Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films
(2013-05-14)
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness ...
Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition
(Elsevier B.V., 2003-01-15)
Intense photoluminescence in highly disordered strontium titanate amorphous thin films prepared by the polymeric precursor method was observed at room temperature (300 K). The luminescence spectra of SrTiO3 amorphous thin ...
Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer
(2013-09-20)
Structural, microstructural and ferroelectric properties of Pb0.90Ca0.10TiO3 (PCT10) thin films deposited using La0.50Sr0.50CoO3 (LSCO) thin films which serve only as a buffer layer were compared with properties of the ...
Effect of pressure-assisted thermal annealing on the optical properties of ZnO thin films
(2012-12-21)
ZnO thin films were prepared by the polymeric precursor method. The films were deposited on silicon substrates using the spin-coating technique, and were annealed at 330°C for 32h under pressure-assisted thermal annealing ...
Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates
(2002-08-01)
Pb1-xLaxTiO3 thin films, (X=0.0; 13 and 0.27mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO2/Si(111), Si(100) and glass substrates by spin coating, and annealed in the 200-300°C ...
Electrical behavior of chemically grown lanthanum ferrite thin films
(2016-02-01)
Perovskite structured oxides are important functional materials often used for the development of modern devices. To extend their applicability, these materials need to be scalably and efficiently grown in the form of thin ...
Problems related to the employment of thin uranium films as neutron dosimeters
(1995-12-01)
Thin uranium films built on muscovite mica basis and obsidian samples having known ages were irradiated with thermal neutrons at the IPEN/CNEN reactor, São Paulo. Comparing thin film performance with the obsidian one, it ...
Photoluminescence of bulks and thin films of Eu3+-doped organic/inorganic hybrids
(Elsevier B.V. Sa, 2008-02-28)
Organic-inorganic hybrids formed by polyether-based chains grafted to both ends to a siliceous backbone through urea cross-linkages (-NHC=O)NH-), named di-ureasil, have been used as host for incorporation of Eu3+ in the ...