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CARACTERIZACIÓN DEL SOI USANDO ANFIS CON RESIDUALES HETEROCEDÁSTICOS
(Universidad de Tarapacá., 2007)
Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
(2020-01-01)
This work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel ...
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor
(2021-08-23)
— In this work we further investigate the operation of theBESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the ...
Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer
(PERGAMON-ELSEVIER SCIENCE LTD, 2008)
In this work the performance of graded-channel (CC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with CC ...
Threshold voltages of SOI MuGFETs
(PERGAMON-ELSEVIER SCIENCE LTD, 2008)
The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled ...
Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures
(2016-09-01)
This paper presents an experimental analysis of the analog application figures of merit: the intrinsic voltage gain (AV) and unit gain frequency, focusing on the performance comparison between silicon triple gate pFinFET ...
A CMOS/SOI single-input PWM discriminator for low-voltage body-implanted applications
(Taylor & Francis Ltd, 2002-08-01)
A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM) signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique ...
Novel Bending Loss Reduction Technique For The Tm Mode In Soi-based Waveguides
(IEEE-Inst Electrical Electronics Engineers IncPiscataway, 2016)
Novel Bending Loss Reduction Technique For The Tm Mode In Soi-based Waveguides
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCPISCATAWAY, 2016)
Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
(PERGAMON-ELSEVIER SCIENCE LTD, 2008)
The temperature influence on the gate-induced floating body effect (GIFBE) in fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs is investigated, based on experimental results and two-dimensional numerical simulations. ...